LandMark Optoelectronics Corporation produces and supplies gallium arsenide (GaAS) and indium phosphide (InP) based epitaxial wafers for optical communication, consumer products, and industrial application, and special-purpose usages in Taiwan, the United States, Mainland China, and internationally. It offers InP laser diode (LD) epi-wafers for use in LDs used for optics communications; photo-detector epi-wafers for use in photo detectors, avalanched detectors, and laser efficiency monitoring and detectors for sensors for optics communication products; and GaAs LD epi-wafers for use in high-power laser machining, bar code scanners, GPS systems, 3D sensors, Lidar autonomous cars, aesthetic medicine machines, and equipment in data centers, as well as provides optical semi-conductors, LDs, and InAlGaP/AlGalnAs. LandMark Optoelectronics Corporation was incorporated in 1997 and is headquartered in Tainan City, Taiwan.